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Correlation between growth dynamics and dielectric properties of epitaxial BaTiO3 films
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) (a) RHEED intensity oscillations (with period Δ) during the BTO growth at T = 680 °C. In the inset: RHEED pattern at 50 keV from which the intensity of the (0,0) reflection has been monitored. (b) Evolution of the (0,0) reflection intensity upon BTO deposition induced by a single laser pulse at T = 680 °C. τs is the characteristic relaxation time. (c) Arrhenius plot of τs and linear fit for T < 680 °C giving the activation energy barrier Ea .

Image of FIG. 2.
FIG. 2.

(Color online) (a) Modulus (full circles, left scale) and phase (empty squares, right scale) of the complex impedance Z vs. frequency for a BTO/Nb:STO sample grown at T = 640 °C. The fit (lines) has been performed by using the equivalent circuit shown in the inset. (b) Total equivalent capacitance as a function of bias, measured at 10 kHz on a film grown at T = 640 °C. (c) P-E characteristics of the sample grown at 640 °C measured at 10 kHz. DLCC compensation technique has been used to subtract leakage contribution.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Real part of the permittivity (ɛ′) and loss tangent at 10 kHz as a function of the growth temperature; (b) Saturation polarization (PS ) and ratio between the time for completing one monolayer (Δ) and the surface relaxation time (τS ), as a function of the growth temperature; (c) XPS analysis of the relative intensities of Ba and Ti peaks in samples grown at 680 °C and 730 °C. Spectra have been normalized to the Ti2p intensity.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between growth dynamics and dielectric properties of epitaxial BaTiO3 films