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Room temperature PR spectra of (a) bulk Ge wafer and three unstrained Ge1−xSnx alloys with Sn concentration of (b) 3.6%, (c) 4.8%, (d) 6.4%.
(Color online) The direct bandgap energy of Ge1−xSnx alloys as a function of Sn concentration. The red-dash line is a fitting of the data to Eq. (2), and the direct band gap bowing parameter is found to be 2.42 ± 0.04 eV.
(Color online) Room temperature PR spectra of compressive-strained Ge1−xSnx alloys and the red dash lines represent the calculated PR moduli. (a) Sn = 3.06%, strain = −0.513%; (b) Sn = 5.28%, strain = −0.594%; (c) Sn = 6.32%, strain = −0.57%.
Sn concentrations, strain state, and heavy- and light-hole transitions measured by PR and PL at room temperature. The lowest transition energies from the PR measurement match the direct transition from the PL measurement.
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