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(Color online) XRD 2θ-ω scan patterns of the InN/GaN structure. The inset shows the SEM topography of the InN film grown on the p-GaN substrate.
(Color online) (a) Schematic illustration of the n-InN/p-GaN heterostructure device. (b) I-V curve of the n-InN/p-GaN heterojunction diode. The turn-on voltage is approximately 0.8 V. The inset shows the I-V curves of Ni/Au and Au ohmic contacts to p-GaN and n-InN, respectively.
(Color online) (a) Band diagram of the n-InN/p-GaN heterostructure at zero forward bias. The heterojunction exhibits a type-I straddling configuration. (b) Band diagram of n-InN/p-GaN heterostructure at higher forward bias.
(Color online) (a) EL spectra of the n-InN/p-GaN heterojunction LED under different forward injection currents, showing a dominant narrow emission peak at 1573 nm. (b) Normalized EL spectra for different injection currents and PL spectrum.
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