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Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes
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10.1063/1.3693150
/content/aip/journal/apl/100/10/10.1063/1.3693150
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3693150
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD 2θ-ω scan patterns of the InN/GaN structure. The inset shows the SEM topography of the InN film grown on the p-GaN substrate.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Schematic illustration of the n-InN/p-GaN heterostructure device. (b) I-V curve of the n-InN/p-GaN heterojunction diode. The turn-on voltage is approximately 0.8 V. The inset shows the I-V curves of Ni/Au and Au ohmic contacts to p-GaN and n-InN, respectively.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Band diagram of the n-InN/p-GaN heterostructure at zero forward bias. The heterojunction exhibits a type-I straddling configuration. (b) Band diagram of n-InN/p-GaN heterostructure at higher forward bias.

Image of FIG. 4.
FIG. 4.

(Color online) (a) EL spectra of the n-InN/p-GaN heterojunction LED under different forward injection currents, showing a dominant narrow emission peak at 1573 nm. (b) Normalized EL spectra for different injection currents and PL spectrum.

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/content/aip/journal/apl/100/10/10.1063/1.3693150
2012-03-07
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Near infrared electroluminescence from n-InN/p-GaN light-emitting diodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/10/10.1063/1.3693150
10.1063/1.3693150
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