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Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) XPS results of the Hf 4f core level and Fermi edge of TiN metal gate. The Fermi level position is determined as the center of the slope as indicated by the vertical line.

Image of FIG. 2.
FIG. 2.

(Color online) XPS results of Hf 4f core level and valence band spectrum for 15 nm HfO2/5 nm SiO2/Si structure.

Image of FIG. 3.
FIG. 3.

(Color online) The schematic of energy band for (a) metal/semiconductor (dielectric) contact and (b) metal/high-k/SiO2/Si stack.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic of band alignments of (a) metal/high-k and high-k/SiO2 interfaces before the contact of these two interfaces and (b) metal/high-k/SiO2 system after the contact of these two interfaces. In (a), the high-k and SiO2 are assumed to be semi-infinite. The band alignment of metal/high-k interface is determined only by this interface itself. So is the case for the high-k/SiO2 interface. In (b), the band alignment is given after the contact of metal/high-k and high-k/SiO2 systems. Here the high-k is with finite thickness.

Image of FIG. 5.
FIG. 5.

(Color online) The dependence of Q0 on HfO2 thickness. Also shown are the theoretical and experimental results of the p-SBH increases versus HfO2 thickness. The inset is the band alignment schematic of TiN/HfO2/SiO2/Si stack with three different HfO2 thicknesses based on the proposed model.

Image of FIG. 6.
FIG. 6.

(Color online) The experimental and theoretical intercepts (I) of VFB -EOT plots of metal/HfO2/terraced SiO2/Si structure versus metal vacuum workfunction. Also shown in Fig. 6 are the n-type SBH versus metal vacuum workfunction based on the conventional theory and this work, respectively. The inset is the fitted formulas.


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Scitation: Band alignment of TiN/HfO2 interface of TiN/HfO2/SiO2/Si stack