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Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) TEM image and EDX spectrum of boron nanosword synthesized via thermoreduction; (a) TEM image of a single boron nanosword; (b) Corresponding SAED pattern, which can be indexed to β-rhombohedral boron; (c) HRTEM image of boron nanosword showing that growth direction is along [010]; and (d) A typical EDX spectrum of boron nanosword and copper grid indicating the magnesium doping.

Image of FIG. 2.
FIG. 2.

(Color online) The V-I characterization of (a) Mg-doped and (c) “pure” boron nanoswords. The inset gives the corresponding AFM image of devices I and II; (b) and (d) Temperature dependence of electrical conductivity of the two devices. The linear fit of and is consistent with Mott’s VRH model.

Image of FIG. 3.
FIG. 3.

(Color online) Temperature dependencies of (a) electrical conductivity, (b) (c) carrier concentration and mobility, (d) ratio of mobility to concentration of devices I (red) and II (black).

Image of FIG. 4.
FIG. 4.

(Color online) (a) A typical EELS spectrum from individual boron “pure” (black) and Mg-doped nanoswords (red). The inset is the reference EELS spectra of bulk crystalline silicon and amorphous silicon oxide; Characteristic (b) Mg K-edges at 1308 eV of nanosword, (c) B K-edges at 188.3 eV for “pure,” B K-edges at 191.5 eV for Mg-doped nanoswords, and (d) a-Si L23-edges at 102.1 eV for “pure,” a-Si L23-edges at 105.4 eV for Mg-doped nanoswords. The latter two are shifted upward 3.2 and 3.3 eV, which can be explained by chemical binding and shifts owing to magnesium doping.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Influence of Si Co-doping on electrical transport properties of magnesium-doped boron nanoswords