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(Color online) (a) Cross section of TG (left) and BG (right) GFETs. (b) Carrier mobility (μ) vs. carrier density (n) for experimental (Exp.) data and calculations (Cal.). CI concentrations are set according to the references (1011 cm−2 to 1012 cm−2).
(Color online) Comparison between experimental data (symbols) and calculations (solid lines) of the g m of TG GFET using HfO2 dielectric with PBL (a) and BG GFET using SiO2 substrate (b). Experimental data are from Ref. 9, Vds = 0.01 V.
(Color online) (a) Mobility (μ) and gate capacitance (Cg ) vs. TPBL in TG GFET employing 10 nm thick HfO2 as gate dielectric. Vgs is set to 1 V. (b) gm , max vs. TPBL in TG GFET with THfO 2 increased from 10 nm to 25 nm. Inset of (a) is the product μ × Cg . Vds = 0.01 V for all calculations.
SPP energies of dielectric materials and mobilities from experiments (Exp.) and calculations (Cal.).
gm , max comparison of data obtained from experiments (Exp.) and calculations (Cal.).
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