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(Color online) DLTS spectra from samples A (a) and B (b) using a rate window of (640 ms)−1 after different annealing processes. A reverse bias voltage of −3 V and filling pulse voltage of 3 V have been employed. C b represents the reverse bias capacitance, N D is the carrier concentration, and is he amplitude of the capacitance transient.
(Color online) DLTS spectra of E2 taken for different reverse biases of −1, −3, and −4 V corresponding to peak electrical fields of 0.5, 1.6, and 1.8, respectively.
Energy position of the E2 defect level versus the square root of the electric field.
Resistivity, obtained from four point probe measurements, and effective carrier concentration, obtained from C-V measurements, of samples A and B after different annealing conditions.
Survey of the energy position and apparent capture cross section of the observed defect levels.
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