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Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices
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10.1063/1.3694024
/content/aip/journal/apl/100/11/10.1063/1.3694024
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694024
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Cross-sectional views of the MIIIM tunnel device. (a) A schematic diagram depicting a fabricated MIIIM device having a 2 nm thick Al2O3 layer, a 2 nm thick HfO2 layer, and a 2 nm thick Cr2O3 layer. (b) The cross-sectional transmission electron microscope (TEM) image of a Cr/Cr2O3-HfO2-Al2O3/Cr MIIIM device. The layers are grown on a 550 nm thick SiO2 film on top of a 500 μm thick Si substrate. Each oxide layer is 2 nm thick. The oxides are grown sequentially in accordance with their ascending potential barrier values (i.e., 0.64 eV, 0.75 eV, and 2.62 eV, for Cr2O3, HfO2, and Al2O3, respectively), thus forming a cascading potential barrier profile.

Image of FIG. 2.
FIG. 2.

(Color online) I-V experimental results and energy band diagram model of the MIIIM device having a cascaded potential barrier profile. (a) Current versus volatge characteristic curves for the Cr/Cr2O3-HfO2-Al2O3/Cr device. (b) Energy band diagram of the M1/Cr2O3-HfO2-Al2O3/M1 device having a cascaded potential barrier profile at zero voltage. Here, M1 represents the Cr electrodes, Φb1 (2.62 eV) and Φb4 (0.64 eV) are the potential barrier heights for Al2O3 and Cr2O3 layers, respectively. Φb2 (0.87 eV) and Φb3 (1.1 eV) are the potential barrier heights between Al2O3-HfO2 and between HfO2-Cr2O3 interfaces, respectively. Energy band diagram18 of the Cr/Cr2O3-HfO2-Al2O3/Cr device at (c) −3.0 V, (d) +1.2 V, and (e) +2.7 V. The arrows depict the electron tunnleing direction.

Image of FIG. 3.
FIG. 3.

(Color online) I-V experimental results and energy band diagram model of the MIIIM device having a non-cascaded potential barrier profile. (a) I-V characteristic curves for the Cr/Cr2O3-Al2O3-HfO2/Cr device. The features in the I-V characteristic curves of the MIIIM device have been marked as (iv), (v), and (vi). (b) Energy band diagram of the M1/Cr2O3-Al2O3-HfO2/M2 device having a non-cascaded potential barrier profile at zero voltage. Here, M1 represents the Cr electrodes, Φb1 (1.75 eV) and Φb4 (0.64 eV) are the potential barrier heights for Al2O3 and Cr2O3 layers, respectively. Φb2 (0.87 eV) and Φb3 (1.98 eV) are the potential barrier heights between HfO2-Al2O3 and between Al2O3-Cr2O3, respectively. The energy band diagram18 of the Cr/Cr2O3-Al2O3-HfO2/Cr device at (c) −1.2 V, (d) +3.0 V, and (e) +3.8 V. The arrows depict the electron tunnleing direction.

Image of FIG. 4.
FIG. 4.

(Color online) Figures of merit used to characterize the efficiency and performance of electron tunneling devices. (a) Logarithmic plot of asymmetry of Cr/Cr2O3-HfO2-Al2O3/Cr and Cr/Cr2O3-Al2O3-HfO2/Cr devices. In both devices, the asymmetry peaks when the current in the negative bias polarity becomes significantly small. For this, the data in the vicinity of these regions were removed within ±100 mV from the peaks. (b) Nonlinearity of the Cr/Cr2O3-HfO2-Al2O3/Cr and Cr/Cr2O3-Al2O3-HfO2/Cr devices.

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/content/aip/journal/apl/100/11/10.1063/1.3694024
2012-03-13
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Observation of resonant tunneling phenomenon in metal-insulator-insulator-insulator-metal electron tunnel devices
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694024
10.1063/1.3694024
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