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Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes
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10.1063/1.3694273
/content/aip/journal/apl/100/11/10.1063/1.3694273
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694273
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Top view of a-IGZO TFT with Cu S/D electrodes and (b) the enhancement and depletion type inverters used in this study.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Transfer characteristics of a-IGZO TFTs with Cu S/D electrodes for different GO distances and (b) field effect mobility as a function of channel length.

Image of FIG. 3.
FIG. 3.

(Color online) (a) R T vs. L for different V GS. (b) Normalized R S/D and L T as a function of V GS.

Image of FIG. 4.
FIG. 4.

(Color online) Transfer characteristics of a-IGZO TFTs having Cu S/D electrodes with V DS range from 0.1 to 20.1 V for different channel lengths: (a) L = 3 μm, (b) L = 5 μm, (c) L = 6 μm, and (d) L = 10 μm. (e) Transfer characteristics in linear region (V DS = 0.1 V) after electro-migration. The increase of subthreshold slope, and negative shift of V TH can be observed as V DS is increased for short channel length TFTs.

Image of FIG. 5.
FIG. 5.

(Color online) (a) Depletion and (b) enhancement type inverters using a-IGZO TFTs with Cu S/D electrodes. Sharp switching properties can be observed in depletion type inverter.

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/content/aip/journal/apl/100/11/10.1063/1.3694273
2012-03-15
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electrical characterization of a-InGaZnO thin-film transistors with Cu source/drain electrodes
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694273
10.1063/1.3694273
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