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(Color online) Rs measurements as a function of different implant temperature reveals the impact of cryogenic implants on the de/reactivation behavior of carborane co-doped with carbon. All samples were subjected to isochronal annealing from 650 °C to 950 °C for 60 s.
(Color online) Boron in carborane SIMS profile comparison between room temperature (RT), −20 °C and −100 °C implants after annealing at 850 °C for 60 s. Preamorphization was achieved by 5 keV carbon, 1 × 1015 cm−2 at corresponding implant temperatures as carborane of energy 7 keV and dosage of 1 × 1014 cm−2.
(Color online) Cross-sectional TEM micrographs of as-implanted samples (5 keV carbon, 1 × 1015 cm−2 + 7 keV carborane, 1 × 1014 cm−2) at different implant temperatures. The amorphous layer thickness with interface roughness is shown for (a) room temperature implant: 80–85 Å and 13–17 Å, (b) −20 °C implant: 170–175 Å and 35–40 Å, and (c) −100 °C implant: 265–270 Å and 22–27 Å, respectively.
(Color online) Schematic illustration of underlying physical mechanism for defect evolution and diffusion for different implant temperatures in carbon PAI substrates.
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