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Physical understanding of cryogenic implant benefits for electrical junction stability
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View: Figures


Image of FIG. 1.
FIG. 1.

(Color online) Rs measurements as a function of different implant temperature reveals the impact of cryogenic implants on the de/reactivation behavior of carborane co-doped with carbon. All samples were subjected to isochronal annealing from 650 °C to 950 °C for 60 s.

Image of FIG. 2.
FIG. 2.

(Color online) Boron in carborane SIMS profile comparison between room temperature (RT), −20 °C and −100 °C implants after annealing at 850 °C for 60 s. Preamorphization was achieved by 5 keV carbon, 1 × 1015 cm−2 at corresponding implant temperatures as carborane of energy 7 keV and dosage of 1 × 1014 cm−2.

Image of FIG. 3.
FIG. 3.

(Color online) Cross-sectional TEM micrographs of as-implanted samples (5 keV carbon, 1 × 1015 cm−2 + 7 keV carborane, 1 × 1014 cm−2) at different implant temperatures. The amorphous layer thickness with interface roughness is shown for (a) room temperature implant: 80–85 Å and 13–17 Å, (b) −20 °C implant: 170–175 Å and 35–40 Å, and (c) −100 °C implant: 265–270 Å and 22–27 Å, respectively.

Image of FIG. 4.
FIG. 4.

(Color online) Schematic illustration of underlying physical mechanism for defect evolution and diffusion for different implant temperatures in carbon PAI substrates.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical understanding of cryogenic implant benefits for electrical junction stability