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(Color online) C-V characteristics of (a) PZT/AlGaN/GaN and (b) LiNbO3/AlGaN/GaN MFS heterostructure
(Color online) Calculated C-V profiles of AlGaN/GaN MFS structure with different Nfixed. The results for switchable and fixed ferroelectric polarization are compared.
(Color online) Initial ferroelectric polarization and the total interface charge density as a function of Nfixed in AlGaN/GaN MFS structure.
(Color online) C-V characteristics of AlGaN/GaN MFS structure with different saturated polarization of ferroelectrics. The interface charge density Nfixed are (a) −0.5 × 1013 cm−2 and (b) −2 × 1013 cm−2.
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