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Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure
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10.1063/1.3694283
/content/aip/journal/apl/100/11/10.1063/1.3694283
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694283
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) C-V characteristics of (a) PZT/AlGaN/GaN and (b) LiNbO3/AlGaN/GaN MFS heterostructure

Image of FIG. 2.
FIG. 2.

(Color online) Calculated C-V profiles of AlGaN/GaN MFS structure with different Nfixed. The results for switchable and fixed ferroelectric polarization are compared.

Image of FIG. 3.
FIG. 3.

(Color online) Initial ferroelectric polarization and the total interface charge density as a function of Nfixed in AlGaN/GaN MFS structure.

Image of FIG. 4.
FIG. 4.

(Color online) C-V characteristics of AlGaN/GaN MFS structure with different saturated polarization of ferroelectrics. The interface charge density Nfixed are (a) −0.5 × 1013 cm−2 and (b) −2 × 1013 cm−2.

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/content/aip/journal/apl/100/11/10.1063/1.3694283
2012-03-13
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Polarization and interface charge coupling in ferroelectric/AlGaN/GaN heterostructure
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694283
10.1063/1.3694283
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