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Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots
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10.1063/1.3694284
/content/aip/journal/apl/100/11/10.1063/1.3694284
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694284
/content/aip/journal/apl/100/11/10.1063/1.3694284
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/content/aip/journal/apl/100/11/10.1063/1.3694284
2012-03-13
2015-07-05
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Extremely long carrier lifetime over 200 ns in GaAs wall-inserted type II InAs quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3694284
10.1063/1.3694284
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