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(Color online) HR-XRD (004) ω-2θ scans for InxGa1−xBiyAs1−y epilayers on InP (black lines) with Bi content of 3.08%, 3.60%, and 3.85% (RBS). The blue lines are simulations.
(Color online) Randomly oriented, simulated, and aligned RBS spectrum for In0.49Ga0.51Bi0.03As0.97 epilayers. Components of In, Ga, Bi, As, and P are indicated based on simulation.
Effects of growth conditions on bismuth incorporation in InxGa1−xBiyAs1−y. (a) Bi content dependence on growth temperature. (b) Bi content dependence on Bi BEP.
(Color online) Detail of the large-mass edge of the randomly oriented (black dots) RBS spectrum for In0.54Ga0.46Bi0.0675As0.9325, the whole spectrum is in the inset. Red line is the simulation for Bi signal with an approximately linear Bi concentration gradient of about 0.0625%/nm in the growth direction. Blue line is a conventional fitting with a constant Bi concentration which clearly does not fit these data.
(Color online) Lines represent simulation results (predicted from VBAC model) and marks represent experimental gap energies of InxGa1−xBiyAs1−y as a function of Bi concentration. Black circle, red square, and blue triangle indicate different In concentrations which are shown in the legend. Inset: Theoretical (line) and experimental (diamonds) results of nominally lattice-matched samples band gap values.
(Color online) A typical (224) reciprocal space map for In0.52Ga0.48Bi0.036As0.964. The Qx and Qy represent the directions that are parallel and normal to the sample’s surface. Intensities are on a log scale.
(Color online) (a) HR-XRD (004) ω-2θ scans for nominally lattice-matched InxGa1−xBiyAs1−y epilayers on InP (black lines) with Bi content of 2.78%, 2.90%, and 3.00% (RBS) (top to bottom). The blue lines are simulations. (b) (224) RSM of nominally lattice-matched sample with 3.00% Bi. (c) (004) RSM of nominally lattice-matched sample with 2.78% Bi.
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