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(Color online) Depth profiles of atomic concentration in the SiO2/bi-layer high-k/TiN stacked structures. Interface passivation layers of Si are inserted at the HfO2/Al2O3 (a) and Al2O3/SiO2 (b) interfaces for samples A and B. Inset for each panel shows a schematic picture of the as-grown sample structure.
(Color online) (a) Image plots of typical time-dependent core-level photoemission spectra as a function of x-ray irradiation time. Peak position of each spectrum is determined by a nonlinear least-squares method using Voigt functions. Traces of binding energy shifts are also shown in each panel. (b) Difference in relative chemical shift of selective elements between samples A and B depending on x-ray irradiation. Open and close symbols indicate binding energy shifts of Al 2p and Si 2p relative to Hf 4f core-levels, respectively. Solid lines denote fit curves using exponential functions.
(Color online) Valence-band spectra for samples A and B where contributions of the TiN electrodes are subtracted. Binding energy is calibrated by Fermi level. Ti 2p core-level spectra and schematic drawings of band alignment for each sample are also shown in the left and right sides, respectively.
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