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Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy
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10.1063/1.3695166
/content/aip/journal/apl/100/11/10.1063/1.3695166
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3695166
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Depth profiles of atomic concentration in the SiO2/bi-layer high-k/TiN stacked structures. Interface passivation layers of Si are inserted at the HfO2/Al2O3 (a) and Al2O3/SiO2 (b) interfaces for samples A and B. Inset for each panel shows a schematic picture of the as-grown sample structure.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Image plots of typical time-dependent core-level photoemission spectra as a function of x-ray irradiation time. Peak position of each spectrum is determined by a nonlinear least-squares method using Voigt functions. Traces of binding energy shifts are also shown in each panel. (b) Difference in relative chemical shift of selective elements between samples A and B depending on x-ray irradiation. Open and close symbols indicate binding energy shifts of Al 2p and Si 2p relative to Hf 4f core-levels, respectively. Solid lines denote fit curves using exponential functions.

Image of FIG. 3.
FIG. 3.

(Color online) Valence-band spectra for samples A and B where contributions of the TiN electrodes are subtracted. Binding energy is calibrated by Fermi level. Ti 2p core-level spectra and schematic drawings of band alignment for each sample are also shown in the left and right sides, respectively.

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/content/aip/journal/apl/100/11/10.1063/1.3695166
2012-03-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Determining factor of effective work function in metal/bi-layer high-k gate stack structure studied by photoemission spectroscopy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3695166
10.1063/1.3695166
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