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Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
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10.1063/1.3695171
/content/aip/journal/apl/100/11/10.1063/1.3695171
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3695171
/content/aip/journal/apl/100/11/10.1063/1.3695171
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/content/aip/journal/apl/100/11/10.1063/1.3695171
2012-03-16
2014-12-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3695171
10.1063/1.3695171
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