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Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
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10.1063/1.3695171
/content/aip/journal/apl/100/11/10.1063/1.3695171
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3695171
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Sulfur concentration depth profiles obtained by SIMS for a sample treated with HF to remove the native oxide and then melted with a single laser shot. The simulations shown use the best-fit values of the diffusivity of S in liquid Si (2.7 × 10−4 cm2/s) and diffusive velocity (1.0 m/s). The shaded region shows the sensitivity of the simulation to changes in the surface evaporation velocity. For the lower concentration limit, the surface evaporation velocity is an order of magnitude greater, and for the upper concentration limit an order of magnitude lower, than the best-fit value of 3.0 nm/s. The surface evaporation velocity of 0.3 nm/s, which leads to the upper concentration limit, is the value obtained previously3 for a sample with a mature native oxide but otherwise nominally identical to this one.

Image of FIG. 2.
FIG. 2.

(Color online) Sulfur concentration depth profiles and simulations for etched and un-etched samples melted four times by consecutive laser shots. The simulations shown use the best-fit values of the diffusivity of S in liquid Si (2.7 × 10−4 cm2/s) and diffusive velocity (1.0 m/s). A constant surface evaporation velocity was assumed for all four melting events.

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/content/aip/journal/apl/100/11/10.1063/1.3695171
2012-03-16
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Controlling dopant profiles in hyperdoped silicon by modifying dopant evaporation rates during pulsed laser melting
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/11/10.1063/1.3695171
10.1063/1.3695171
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