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Diode currents (full symbols) and spin dependent recombination currents (open symbols) as a function of the diode forward bias VD. Diamonds correspond to sample 1 (5 × 1017/cm3 implanted n-type region) and triangles to sample 2 (2 × 1015/cm3 epitaxially grown n-type region). For sample 1, the SDR intensity was measured as a function of VD (open diamonds) showing an exponential increase by VD/2 kT consistent with trap-assisted recombination (solid fit line F1). A more precise model that takes the approaching disappearance of the depletion region into account explains the deflection and the peak in the SDR data (solid fit line F2).
(Color online) SDR traces of the two differently processed pn diodes. Sample 1 is illustrated in (a), sample 2 in (b). The signal of the pn junction with the epitaxially grown n-type region (sample 2) was multiplied by a factor 100 in order to yield a comparable amplitude as the signal of the nitrogen implanted sample (sample 1). Bias and spectrometer settings were adjusted for best signal/noise ratio. Sample 1 in (a) differs significantly from sample 2 in (b) in signal intensity, line shape, and g value. In particular, sample 1 shows a three line spectrum (illustrated by dotted lines) suggesting HF interaction between the deep level defects electron wave function and a spin 1 paramagnetic nucleus (nitrogen).
(Color online) The derivative of the SDR spectrum of sample 1. Shown is a 100 G wide scan. For better visibility, outer parts of the spectrum with small integrated intensities were enlarged by a factor 10. The spectrum reveals besides the three center lines (LL/CL/RL with HF ≈ 15 G), three additional pairs of more distant HF interactions (L1/R1 with HF ≈ 28 G, L2/R2 with HF ≈ 41 G, and L3/R3 with HF ≈ 65 G). We attribute these HF interactions to additional structure of an intrinsic nature within this defect.
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