1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
The full text of this article is not currently available.
Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
Rent:
Rent this article for
USD
10.1063/1.3693160
/content/aip/journal/apl/100/12/10.1063/1.3693160
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3693160
/content/aip/journal/apl/100/12/10.1063/1.3693160
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/100/12/10.1063/1.3693160
2012-03-23
2014-12-19
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3693160
10.1063/1.3693160
SEARCH_EXPAND_ITEM