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Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
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10.1063/1.3693160
/content/aip/journal/apl/100/12/10.1063/1.3693160
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3693160

Figures

Image of FIG. 1.
FIG. 1.

(Color online) Schematic of InGaAsSbN heterojunction solar cell structure. Two different types of solar cells depend on thickness (sample A: 250 nm and sample B: 500 nm) of InGaAsSbN base layer.

Image of FIG. 2.
FIG. 2.

(Color online) Time resolved photoluminescence decay curves measured from dilute nitride solar cell structures with 250 and 500 nm-thick base layers.

Image of FIG. 3.
FIG. 3.

(Color online) Photocurrent-voltage characteristics of InGaAsSbN solar cell with 250 nm and 500 nm bases under 1 sun AM1.5 direct illumination with entire spectrum range between 35 nm and 1200 nm.

Image of FIG. 4.
FIG. 4.

(Color online) Measured spectral external quantum efficiencies of heterojunction InGaAsSbN solar cells with 250 and 500 nm-thick base layers.

Tables

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Table I.

Summary of carrier lifetimes and amplitudes measured from samples A and B.

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/content/aip/journal/apl/100/12/10.1063/1.3693160
2012-03-23
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Narrow band gap (1 eV) InGaAsSbN solar cells grown by metalorganic vapor phase epitaxy
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3693160
10.1063/1.3693160
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