1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
Rent:
Rent this article for
USD
10.1063/1.3694054
/content/aip/journal/apl/100/12/10.1063/1.3694054
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3694054
/content/aip/journal/apl/100/12/10.1063/1.3694054
Loading

Data & Media loading...

Loading

Article metrics loading...

/content/aip/journal/apl/100/12/10.1063/1.3694054
2012-03-20
2014-07-30
Loading

Full text loading...

This is a required field
Please enter a valid email address
This feature is disabled while Scitation upgrades its access control system.
This feature is disabled while Scitation upgrades its access control system.
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: On the origin of the redshift in the emission wavelength of InGaN/GaN blue light emitting diodes grown with a higher temperature interlayer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3694054
10.1063/1.3694054
SEARCH_EXPAND_ITEM