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(Color online) (a) Sheet resistivity as a function of temperature for Sb2Te and Ti10Sb60Te30 films. (b) The Arrhenius extrapolation at 10-yr of data retention for Ti10Sb60Te30 film. The inset shows the normalized sheet resistance as a function of time at various isothermal annealing temperatures (195 °C, 200 °C, 205 °C, and 210 °C).
(Color online) (a) X-ray diffraction patterns of Sb2Te and Ti10Sb60Te30 films. XPS spectra for pure Ti, Sb2Te, and Ti10Sb60Te30 films annealed at 250 °C: (b) Ti 2 p, (c) Sb 4d, and (d) Te 4d.
The HRTEM image (a) and SAED patterns (b) of Ti10Sb60Te30 films annealed at 250 °C.
(Color online) (a) Current-voltage and (b) resistance-voltage characteristics of Ti10Sb60Te30-PCM device. (c) Resistance of the device as a function of pulse width at different fixed pulse amplitudes. (d) The endurance characteristic of the device.
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