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Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed
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10.1063/1.3695036
/content/aip/journal/apl/100/12/10.1063/1.3695036
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3695036
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Sheet resistivity as a function of temperature for Sb2Te and Ti10Sb60Te30 films. (b) The Arrhenius extrapolation at 10-yr of data retention for Ti10Sb60Te30 film. The inset shows the normalized sheet resistance as a function of time at various isothermal annealing temperatures (195 °C, 200 °C, 205 °C, and 210 °C).

Image of FIG. 2.
FIG. 2.

(Color online) (a) X-ray diffraction patterns of Sb2Te and Ti10Sb60Te30 films. XPS spectra for pure Ti, Sb2Te, and Ti10Sb60Te30 films annealed at 250 °C: (b) Ti 2 p, (c) Sb 4d, and (d) Te 4d.

Image of FIG. 3.
FIG. 3.

The HRTEM image (a) and SAED patterns (b) of Ti10Sb60Te30 films annealed at 250 °C.

Image of FIG. 4.
FIG. 4.

(Color online) (a) Current-voltage and (b) resistance-voltage characteristics of Ti10Sb60Te30-PCM device. (c) Resistance of the device as a function of pulse width at different fixed pulse amplitudes. (d) The endurance characteristic of the device.

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/content/aip/journal/apl/100/12/10.1063/1.3695036
2012-03-19
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3695036
10.1063/1.3695036
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