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Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed
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10.1063/1.3695036
/content/aip/journal/apl/100/12/10.1063/1.3695036
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3695036
/content/aip/journal/apl/100/12/10.1063/1.3695036
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/content/aip/journal/apl/100/12/10.1063/1.3695036
2012-03-19
2014-12-27
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Ti10Sb60Te30 for phase change memory with high-temperature data retention and rapid crystallization speed
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3695036
10.1063/1.3695036
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