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(Color online) Scheme of the device showing two separated graphene electrodes on top of the n-doped SiC. The current is guided through the semiconducting layer, which is vertically confined by an underlying semi-insulating or a p-doped layer. The IL droplet serves as gate electrode.
(Color online) Transfer characteristics (upper panel) and leakage currents (lower panel) for sample A (a) and sample B (b). The device operation of wafer B can be tuned using a parametric backgate voltage V BG. Both normally on (red squares) and normally off (blue triangles) operations are possible. The inset shows the same data in logarithmic scale.
(Color online) (a) Sketch of a control experiment to explore the influence of the gate on the injection barrier between graphene and SiC. Current flows through a gated graphene electrode to the substrate contacted with an ohmic nickel contact. (b) I-V measurements at different gate voltages show only little difference.
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