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(Color online) (a) Schematic illustration of the device structure consisting of the gate electrode, the polymer film containing the ionic liquid (ionic liquid film), and the Co (cobalt) thin film. The electric double layers (EDLs) are formed at the interface between the cobalt thin film and the ionic liquid film and also at that between the platinum film (gate electrode) and the ionic liquid film. (b) The equivalent circuit schematic of the present device.
(Color online) Magnetization (M) versus external magnetic field (H) curves at 300 K under different gate voltages (V G). The vertical axis represents M divided by the total area of the sample (S). V G was applied in an order of 0 V, 1.5 V, and 2.0 V. H was applied perpendicular to the sample plane.
(Color online) Gate voltage (V G) dependence of (a) the remanent magnetization (M r) and (b) coercivity at 300 K. The vertical axis of (a) represents M r divided by the total area of the sample (S).
(Color online) Temperature (T) dependence of the magnetization (M) at H = 2 Oe under V G = −2 (diamonds), 0 (circles), and +2 V (triangles).
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