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SEM image of a fabricated Schottky contacted Si nwFET sensor.
(Color online) Transfer characteristics and output characteristics of Schottky contacted Si nwFET sensors with varying channel length. (a) Basic transfer characteristics of a Si nwFET. (b) Current dependence on channel length. (c) The typical output characteristics of Si nwFETs.
(Color online) The light response of Schottky contacted Si nwFET sensors with varying channel length. (a) Typical light response as a function of drain voltage and gate voltage. (b) The current difference (ΔILight-Dark ) and the normalized value (ΔILight-Dark/IDark ) between the light and dark conditions in the linear regime. (c) The current difference and the normalized value in the subthreshold regime.
(Color online) Channel resistance to contact resistance ratio and normalized current difference with threshold voltage shifting in Si nwFETs. (a) The channel resistance to contact resistance ratio in Si nwFET as function of channel length and substrate gate voltage. (b) Normalized current difference (ΔILight-Dark/IDark ) versus channel length of a Schottky contacted Si nwFET estimated from Figure 1(a) with an assumed ΔVTH = 1 V for both subthreshold and linear operations.
(Color online) Normalized current difference (ΔI/Ip H = 2) versus pH value extracted from Schottky contacted Si nwFETs with different channel length biased in the subthreshold region.
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