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Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors
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10.1063/1.3696038
/content/aip/journal/apl/100/12/10.1063/1.3696038
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696038
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) Effective electron mobility is extracted from (100) and (110) sidewall FinFETs using split-CV method and shown as a function of Ninv . Inset shows the CB ellipsoids and their conductivity effective masses for (100) and (110) inversion layer. In addition, the density-of-states and confinement mass values are also tabulated.

Image of FIG. 2.
FIG. 2.

(Color online) Standard Schrodinger-Poisson self-consistent simulation procedure is modified to take non-parabolic confinement mass of Δ2 valley on (110) into account. The inner loop ensures that the correct energy pair converges.

Image of FIG. 3.
FIG. 3.

(Color online) (a) Energy-k dispersion relation of mt in 〈110〉 direction is shown for parabolic and non-parabolic band models. (b) The solid line represents the of is obtained from the inverse second derivative of the tight-binding E-k relation. Circles are the converged pairs in the inner loop of Fig. 2.

Image of FIG. 4.
FIG. 4.

(Color online) (110) CB valley energy and degeneracies are shown. Under PCM, confinement splits valleys and Δ4 becomes ground valley due to the heavier . When non-parabolicity is included, the of Δ2 becomes much heavier and switches the valleys over.

Image of FIG. 5.
FIG. 5.

(Color online) Inversion electron density dependent is shown for (100) and (110) for both parabolic and non-parabolic confinement mass methods. Under non-parabolic model, the for both (100) and (110) are similar, which suggests the comparable electron mobility shown in Fig. 1.

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/content/aip/journal/apl/100/12/10.1063/1.3696038
2012-03-20
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Physical insights on comparable electron transport in (100) and (110) double-gate fin field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696038
10.1063/1.3696038
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