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Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
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/content/aip/journal/apl/100/12/10.1063/1.3696045
2012-03-21
2014-09-21

Abstract

Two-dimensional transition-metal dichalcogenides such as MoS2 are promising channel materials for transistor scaling. Here, we report the performance and environmental effects on back-gated bi-layer MoS2field-effect transistors. The devices exhibit Ohmic contacts with titanium at room temperature, on/off ratio higher than 107, and current saturation. Furthermore, we show that the devices are sensitive to oxygen and water in the ambient. Exposure to ambient dramatically reduces the on-state current by up to 2 orders of magnitude likely due to additional scattering centers from chemisorption on the defect sites of MoS2. We demonstrate that vacuum annealing can effectively remove the absorbates and reversibly recover the device performances. This method significantly reduces the large variations in MoS2 device caused by extrinsic factors.

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Scitation: Electrical characterization of back-gated bi-layer MoS2 field-effect transistors and the effect of ambient on their performances
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696045
10.1063/1.3696045
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