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Low energy electron beam induced vacancy activation in GaN
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10.1063/1.3696047
/content/aip/journal/apl/100/12/10.1063/1.3696047
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696047
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Normalized GaN band-to-band PL intensities as a function of 5–20 keV e-beam irradiation dose. Exponential curves serve as a guide to the eye.

Image of FIG. 2.
FIG. 2.

Positron stopping profile and electron energy dissipation profile plotted as a function of depth in GaN.

Image of FIG. 3.
FIG. 3.

The S and W parameters measured from the irradiated samples with selected positron implantation energies. Values characteristic of the GaN lattice and the in-grown Ga vacancy-related defects are also shown. The open circles show the parameters for 5 keV e-beam with dose increasing from 5 to 160 μC/cm2. The inset shows the increase of the S parameter as a function of percentual decrease of the PL intensity with increasing 5 keV dose.

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/content/aip/journal/apl/100/12/10.1063/1.3696047
2012-03-21
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Low energy electron beam induced vacancy activation in GaN
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696047
10.1063/1.3696047
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