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Mapping of the epitaxial stabilization of quasi-tetragonal BiFeO3 with deposition temperature
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10.1063/1.3696048
/content/aip/journal/apl/100/12/10.1063/1.3696048
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696048
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Figures

Image of FIG. 1.
FIG. 1.

(Color online) XRD θ/2θ scans. Labels at the left indicate the deposition temperature. The intensity scale corresponds to the films grown at 550 °C; the other patterns are vertically shifted for clarity. Labels at the top index the peak. T and R correspond to the quasi-tetragonal and rhombohedral phases of BFO, respectively, L to LAO, and BO and FO to bismuth and iron oxides, respectively.

Image of FIG. 2.
FIG. 2.

(Color online) (a) Map of intensity of the diffraction peaks in the 15–52° range for the single films deposited from 550 to 750 °C and (b) for nanostructures, with reflections corresponding to CoFe2O4 labelled with C. (c) Ratio of intensity of T-BFO(002) and R-BFO(002) peaks as a function of the deposition temperature. (d) Sketch represents the distinct temperature regions considering formed phases in single films (top panel) and nanostructures (bottom panel).

Image of FIG. 3.
FIG. 3.

(Color online) (a) XRD φ-scans around the LAO(303) and T-BFO(303) reflections, integration (Δ2θ = ±0.5° around 2θ = 105°, and Δχ = ±2° around χ = 50.5°) of 2D detector images for φ = 0–360° in steps Δφ = 0.5° (b) Summed χ-2θ frames around LAO(303) in a range of 10° in φ (step 0.2°) around φ = 90°. (c) Zoom of φ-scans around LAO(303) and the equivalent (303) reflections to T-BFO(303), the latter formed by TI and TII contributions. (d) Topographic AFM image, with a height profile in the inset along the drawn line showing periodic height variations in the lamellae like areas.

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/content/aip/journal/apl/100/12/10.1063/1.3696048
2012-03-22
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Mapping of the epitaxial stabilization of quasi-tetragonal BiFeO3 with deposition temperature
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696048
10.1063/1.3696048
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