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Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
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10.1063/1.3696077
/content/aip/journal/apl/100/12/10.1063/1.3696077
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696077

Figures

Image of FIG. 1.
FIG. 1.

(Color online) (a) Si-As-Te ternary phase diagram for the film composition. (b) Current density of Si-As-Te thin film induced by voltage pulse. Inset: measurement set-up.

Image of FIG. 2.
FIG. 2.

(Color online) (a) I-V characteristics of the Si-As-Te thin films with composition 1 (black star), 2 (red square), and 3 (blue sphere). Left inset: calculated I-V curves using parameters in Table I. Right inset: current sweep (open black) and voltage sweep (filled red) I-V curves of the film with composition 1. (b) Threshold (black square) and holding voltages (red circle) of the Si-As-Te thin films with composition 1, 2, and 3. Inset: endurance characteristics of Si-As-Te thin films of the composition 1.

Image of FIG. 3.
FIG. 3.

(Color online) (a) I-V characteristics of the Si-As-Te selector device (selector, red star) and TiO2 unipolar memory (memory, black sphere). (b) An I-V curve of the serially connected selector and memory. Inset: measurement set-up

Tables

Generic image for table
Table I.

Parameters for analytical calculation of TS I-V curves.

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/content/aip/journal/apl/100/12/10.1063/1.3696077
2012-03-21
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Threshold switching in Si-As-Te thin film for the selector device of crossbar resistive memory
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696077
10.1063/1.3696077
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