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(Color online) (a) Si-As-Te ternary phase diagram for the film composition. (b) Current density of Si-As-Te thin film induced by voltage pulse. Inset: measurement set-up.
(Color online) (a) I-V characteristics of the Si-As-Te thin films with composition 1 (black star), 2 (red square), and 3 (blue sphere). Left inset: calculated I-V curves using parameters in Table I. Right inset: current sweep (open black) and voltage sweep (filled red) I-V curves of the film with composition 1. (b) Threshold (black square) and holding voltages (red circle) of the Si-As-Te thin films with composition 1, 2, and 3. Inset: endurance characteristics of Si-As-Te thin films of the composition 1.
(Color online) (a) I-V characteristics of the Si-As-Te selector device (selector, red star) and TiO2 unipolar memory (memory, black sphere). (b) An I-V curve of the serially connected selector and memory. Inset: measurement set-up
Parameters for analytical calculation of TS I-V curves.
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