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Erratum: “Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction” [Appl. Phys. Lett. 90, 222111 (2007)]
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1. K. S. Mckay, F. P. Lu, J. Kim, C. Yi, A. S. Brown, and A. Hawkins, Appl. Phys. Lett. 90, 222111 (2007).
http://dx.doi.org/10.1063/1.2745254
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2. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).
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3. H. C. Card and E. H. Rhoderick, J. Phys. D: Appl. Phys. 4, 1589 (1971).
http://dx.doi.org/10.1088/0022-3727/4/10/319
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2012-03-22
2014-09-20

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Scitation: Erratum: “Band discontinuity measurements of the wafer bonded InGaAs/Si heterojunction” [Appl. Phys. Lett. 90, 222111 (2007)]
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696305
10.1063/1.3696305
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