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SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
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10.1063/1.3696641
/content/aip/journal/apl/100/12/10.1063/1.3696641
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696641
/content/aip/journal/apl/100/12/10.1063/1.3696641
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/content/aip/journal/apl/100/12/10.1063/1.3696641
2012-03-21
2014-07-14
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: SiN passivation layer effects on un-gated two-dimensional electron gas density in AlGaN/AlN/GaN field-effect transistors
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/12/10.1063/1.3696641
10.1063/1.3696641
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