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(a) TD-SHG data (open symbols) at various incident powers of 780 nm laser pulses illumination and the lines are the fitting curves according to Eq. (1). (b) Laser power dependence of time constant from the TD-SHG data in (a) and the inset shows the schematic band diagram for multi-photon injection.
IPE yield spectra as a function of photon energy measured with +2.5 V bias on the TaN electrode in (100)Si/BeO/TaN capacitors and the inset on the right bottom corner shows the schematic band diagram for charge injection. The inset on the left top corner shows the square root of yield from as-deposited sample with TaN biased −2.5 V.
(a) Schottky plot of the yield spectral thresholds to determine the intrinsic zero-field barrier height by a linear extrapolation. (b) Order of electron injection process as a function of fundamental photon energy for as-deposited sample.
XPS spectra of the as-deposited and annealed BeO VB structure. The inset shows the absorption spectrum of the as-deposited sample measured by SE.
Schematic band diagram of the interface between Si and AD and annealed BeO. The shaded grey area in the CB denotes possible band tail states above the absorption edge probed by IPE/IMPE.
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