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Electron temperature in electrically isolated Si double quantum dots
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10.1063/1.3697832
/content/aip/journal/apl/100/13/10.1063/1.3697832
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3697832
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) Positions of the detector’s Coulomb peak maxima as a function of and (dotted line). Charge transitions in the DQD are sensed as shifts in the position of the peak maxima that periodically break their trajectories. Dashed lines highlight the loci of the shifts as parallel straight lines that separate regions of equal charge distribution in the DQD. Top inset: false colour SEM micrograph of a representative device with scale bar of 200 nm. Designation of electrodes: detector’s source (S), drain (D), and gate (G); DQD’s gates (GDD, G0). Bottom inset: SET current in the region highlighted by the dashed rectangle in the main plot. Current range: 0 pA 55 pA. Arrows highlight the peaks’ shift. (b) Differential conductance of the detector as a function of . is simultaneously compensated to keep the conductance level at a fixed value. Pairs of arrows highlight sharp spikes which reveal sudden change of conductance due to tunnelling events in the DQD.

Image of FIG. 2.
FIG. 2.

Time-resolved traces of the normalised SET conductance near a transition point for  = −2.549 V, −2.551 V, −2.553 V, −2.555 V, −2.558 V from top to bottom. The conductance fluctuates between two discrete levels according to the DQD occupancy modification given by the gate voltage applied. Histograms on the left hand side account for the time the system spends in each state; n is the normalised number of points per trace at the conductance level given on the vertical axis.

Image of FIG. 3.
FIG. 3.

(a) Occupation probability function extracted from time-resolved traces as a function of the electrochemical potential relative to . Data points are taken at different base temperatures as reported in the legend. Solid lines are best fits according to the FD distribution. Left inset: equivalent circuit indicating the main coupling capacitances to the detector as well as the self-capacitances of the two dots. Coupling to gate G0 is omitted. (b) Estimates of electron temperatures in the DQD (squares) and SET (dots). Data points for the DQD are obtained by using as a fitting parameter for distributions of the type shown in (a). FWHM of the SET is evaluated by fitting Coulomb resonances with Lorentzian peak functions. Dashed lines indicate the knee points which estimate the minimum electron temperatures in the detector, 650 mK, and the DQD, 500 mK.

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/content/aip/journal/apl/100/13/10.1063/1.3697832
2012-03-27
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Electron temperature in electrically isolated Si double quantum dots
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3697832
10.1063/1.3697832
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