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Probing crossover from analogous weak antilocalization to localization by an Aharonov-Bohm interferometer on topological insulator surface
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10.1063/1.3697993
/content/aip/journal/apl/100/13/10.1063/1.3697993
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3697993
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Figures

Image of FIG. 1.
FIG. 1.

Surface electronic interferometer, comprising a spin polarized STM tip at r and two impurities at r 1 and r 2 separately. The interference contributions in the LDOS are introduced by the electrons traveling along clockwise and anticlockwise loops enclosed by the STM tip and two impurities. The applied magnetic field B affects this interference via the AB effect.

Image of FIG. 2.
FIG. 2.

Simulations of the AB oscillations of the electronic LDOS in Bi2Te3 (111) surface with two nonmagnetic impurities under a magnetic field B = 5 T. The left, middle, and right panels correspond to the total, spin-up, and spin-down LDOSs, respectively. We choose in (a–c), 0.3 in (d–f), and 0.6 in (g–i) with meV. The horizontal strips in patterns are signature of AB effect. The green dots denote the impurity positions. The other parameters are chosen as m/s, d = 30 nm, and U = 1 eV.

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/content/aip/journal/apl/100/13/10.1063/1.3697993
2012-03-27
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Probing crossover from analogous weak antilocalization to localization by an Aharonov-Bohm interferometer on topological insulator surface
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3697993
10.1063/1.3697993
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