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Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier
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10.1063/1.3698151
/content/aip/journal/apl/100/13/10.1063/1.3698151
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3698151
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Figures

Image of FIG. 1.
FIG. 1.

Schematic structure of (a) ZnO:Co/ZnO:Mg/ZnO:Co junction and (b) MTJs arrays. The black squares 1, 2, and 3 are junction areas. (c) Low-magnification cross-section TEM image of ZnO:Co/ZnO:Mg/ZnO:Co junction. (d) HRTEM image of ZnO:Co/ZnO:Mg/ZnO:Co interfaces.

Image of FIG. 2.
FIG. 2.

Nonlinear I-V curves of ZnO:Co/ZnO:Mg/ZnO:Co junction at fields H = 0 T and H = 2 T at 5 K. The inset displays the typical bias voltage dependent TMR at 5 K.

Image of FIG. 3.
FIG. 3.

(a) The magnetic field dependent MR of ZnO:Co/ZnO:Mg/ZnO:Co junction measured at 5, 10, 20, and 30 K. The magnetic field dependent MR of (b) a 500-nm-thick ZnO:Co thin film and (c) broken junction at 5 K.

Image of FIG. 4.
FIG. 4.

Temperature dependence of junction resistance Rj at zero magnetic field. The inset shows the phenomenological fitting of Rj on T−4/3, where solid squares are for experimental data and solid line for fitting.

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/content/aip/journal/apl/100/13/10.1063/1.3698151
2012-03-27
2014-04-17
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhanced tunnel magnetoresistance in fully epitaxial ZnO:Co-based magnetic tunnel junctions with Mg-doped ZnO barrier
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3698151
10.1063/1.3698151
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