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Schematic structure of (a) ZnO:Co/ZnO:Mg/ZnO:Co junction and (b) MTJs arrays. The black squares 1, 2, and 3 are junction areas. (c) Low-magnification cross-section TEM image of ZnO:Co/ZnO:Mg/ZnO:Co junction. (d) HRTEM image of ZnO:Co/ZnO:Mg/ZnO:Co interfaces.
Nonlinear I-V curves of ZnO:Co/ZnO:Mg/ZnO:Co junction at fields H = 0 T and H = 2 T at 5 K. The inset displays the typical bias voltage dependent TMR at 5 K.
(a) The magnetic field dependent MR of ZnO:Co/ZnO:Mg/ZnO:Co junction measured at 5, 10, 20, and 30 K. The magnetic field dependent MR of (b) a 500-nm-thick ZnO:Co thin film and (c) broken junction at 5 K.
Temperature dependence of junction resistance Rj at zero magnetic field. The inset shows the phenomenological fitting of Rj on T−4/3, where solid squares are for experimental data and solid line for fitting.
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