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Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations
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10.1063/1.3698325
/content/aip/journal/apl/100/13/10.1063/1.3698325
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3698325
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Temperature profile along the direction perpendicular to the interface, averaged over 1 ns NEMD. Upper panel: cSi/aSi. Lower panel: cSi/aSiO2.

Image of FIG. 2.
FIG. 2.

Semi-log plot of the temperature difference ΔT vs. time, from {NVE} molecular dynamics with the AEMD method, after initial equilibration at 600K (cSi) and 400 K (aSiO2). Cross section 19.4 nm2; constant crystal block length, LC  = 150 nm; variable silica block length, LA  = 5, 10, 15, and 36 nm. The single-exponential decay times extracted by linear fit (red lines) are: τ = 18ps for LA  = 5 nm; 42 ps for 10 nm; 71 ps for 15 nm; and 245ps for 36 nm.

Image of FIG. 3.
FIG. 3.

Inverse conductance (1/G) of cSi/aSiO2 (□) and cSi/aSi (▪) interfaces, plotted vs. the length of the amorphous block LA . The red circle at LA  = 0 indicates the thermal resistance of a perfect bulk cSi slab with LC  = 150 nm.

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/content/aip/journal/apl/100/13/10.1063/1.3698325
2012-03-28
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Thermal boundary resistance at silicon-silica interfaces by molecular dynamics simulations
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/13/10.1063/1.3698325
10.1063/1.3698325
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