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Very low bias stress in n-type organic single-crystal transistors
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19.The best fits were calculated using the MINUIT code (Ref. 18) by minimizing χ2 on logarithmic sub-sets (nine points per decade: t = 0.1, 0.2, 0.3 s, …, 1, 2, 3 s, …, 10, 20, 30 s, …) of the experimental data.
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Bias stress effects in n-channel organic field-effect transistors(OFETs) are investigated using N,N′-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s (PDIF-CN2) single-crystaldevices with Cytop gate dielectric, both under vacuum and in ambient. We find that the amount of bias stress is very small as compared to all (p-channel) OFETs reported in the literature. Stressing the PDIF-CN2devices by applying 80 V to the gate for up to a week results in a decrease of the source drain current of only ∼1% under vacuum and ∼10% in air. This remarkable stability of the devices leads to characteristic time constants τ, extracted by fitting the data with a stretched exponential—that are τ ∼ 2 × 109 s in air and τ ∼ 5 × 109 s in vacuum—approximately two orders of magnitude larger than the best values reported previously for p-channel OFETs.
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