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Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
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10.1063/1.3696672
/content/aip/journal/apl/100/14/10.1063/1.3696672
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3696672
/content/aip/journal/apl/100/14/10.1063/1.3696672
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/content/aip/journal/apl/100/14/10.1063/1.3696672
2012-04-02
2014-08-01
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3696672
10.1063/1.3696672
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