Full text loading...
Log I vs. log V plot (tox=10 nm HfO2) showing a linear behavior for the range of applied temperatures for the ReRAM in LRS. The inset shows the forming and unipolar SET/RESET behavior for a 10 nm HfO2 ReRAM cell.
Arrhenius plot of the resistance for the 5 nm and 10 nm HfO2 MIM cap in LRS. The activation energy is around 0.15±0.06 eV for both thicknesses. The error bar represents the maximum statistical error originating from spread on repetitive measurements.
Computed electronic density of states (DOS) of the relaxed HfOx and the reference HfO2 structures versus energy relative to the valence band edge (EV); Eg (HfOx, HfO2) marks the energy bandgap of the two simulated atomic structures. The inset shows that a further increment of the fraction of Vo in HfOx is predicted to lead to the formation of a metallic filament with Eg ∼ 0 eV.
Article metrics loading...