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Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
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10.1063/1.3696672
/content/aip/journal/apl/100/14/10.1063/1.3696672
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3696672
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Log I vs. log V plot (tox=10 nm HfO2) showing a linear behavior for the range of applied temperatures for the ReRAM in LRS. The inset shows the forming and unipolar SET/RESET behavior for a 10 nm HfO2 ReRAM cell.

Image of FIG. 2.
FIG. 2.

Arrhenius plot of the resistance for the 5 nm and 10 nm HfO2 MIM cap in LRS. The activation energy is around 0.15±0.06 eV for both thicknesses. The error bar represents the maximum statistical error originating from spread on repetitive measurements.

Image of FIG. 3.
FIG. 3.

Computed electronic density of states (DOS) of the relaxed HfOx and the reference HfO2 structures versus energy relative to the valence band edge (EV); Eg (HfOx, HfO2) marks the energy bandgap of the two simulated atomic structures. The inset shows that a further increment of the fraction of Vo in HfOx is predicted to lead to the formation of a metallic filament with Eg ∼ 0 eV.

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/content/aip/journal/apl/100/14/10.1063/1.3696672
2012-04-02
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3696672
10.1063/1.3696672
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