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Raman sensitivity to crystal structure in InAs nanowires
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10.1063/1.3698115
/content/aip/journal/apl/100/14/10.1063/1.3698115
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3698115
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

TEM dark field images of InAs NWs of sample (a) NW1 and (b) NW2. Right hand corner of (a) and (b) shows the magnified view of a part of the NW. The red arrows show the length of the WZ parts. (c) Electron diffraction patterns for sample NW1 and (d) NW2. Both patterns can be indexed as [2-1-10] WZ zone axes. At the left upper corners, magnified parts of the patterns corresponding to the rectangular white boxes are displayed. The contrast is enhanced in order to visualize the weak spots corresponding to the ZB phase (indicated by arrows). The white circle indicates the position and the size of the objective diaphragm used for the dark field images in (a) and (b).

Image of FIG. 2.
FIG. 2.

Raman spectra of (a) bulk InAs and (b) as-grown InAs NWs (NW1) in parallel and cross polarization configurations, recorded at 140 K. (c) Variation of ωTO with temperature (filled symbols). The error bars correspond to the standard error to ω as obtained from non-linear least square fit to the spectra. The solid lines are the best fit to the data points, from which the slopes are calculated. Symbols: ○ for bulk InAs, Δ for NW1 and ★ for NW2.

Image of FIG. 3.
FIG. 3.

Variation of ΓLO with temperature for (a) bulk InAs, (b) NW1, and (c) NW2. The error bars correspond to the standard error in ΓLO as obtained from non-linear least square fit to the spectra.

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/content/aip/journal/apl/100/14/10.1063/1.3698115
2012-04-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Raman sensitivity to crystal structure in InAs nanowires
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3698115
10.1063/1.3698115
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