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Multifrequency C-V curves measured at 300 K (a) and 77 K (b) on a Al/a-Si:H(p+; 20 nm)/a-Si:H(intrinsic; 54 nm)/n-(100)Si sample. Arrows indicate the direction of the voltage sweep.
100 kHz C-V curves measured at 77 K on n-and p-(100)Si/a-Si:H(intrinsic, 54–56 nm)/a-Si:H(p+, 20 nm)/Al structures. Arrows indicate the direction of the voltage sweep.
K-band (≈20.5 GHz) ESR spectra measured at 6 K (Pμ = 25 nW; Bm = 1.3 G) on a p-(100)Si/a-Si:H(intrinsic, 56 nm)/a-Si:H(p+-doped, 20 nm) sample with (a) the magnetic field B oriented along the  normal to the sample surface (magnet angle ϕB = 0°) and (b) at angle ϕB = 55° with showing the splitting up of the Pb0 signal in two parts with intensity ratio 1:3 for the latter field orientation. The signal at g = 1.99869 stems from a co-mounted calibrated Si:P marker sample. The dotted curves represent optimized total spectra simulations, obtained as sums of the individual simulated component signals.
Flatband voltage deduced with the gate voltage swept from accumulation to inversion (□) and hysteresis data (◯) extracted from 100 kHz C-V curves, all measured at 77 K on Al/a-Si:H(p+; 20 nm)/a-Si:H(intrinsic)/n-(100)Si samples as a function of the physical thickness of the intrinsic a-Si:H layer. The dashed curve illustrates the Vfb shift expected for the case of re-charging of ∼1.2 × 1017 traps/cm3 distributed uniformly across the i-a-Si:H film, while the solid line represents a least square linear fit used to infer the interface fixed charge density (slope). The inset shows the sample structure.
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