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Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
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10.1063/1.3698386
/content/aip/journal/apl/100/14/10.1063/1.3698386
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3698386
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Figures

Image of FIG. 1.
FIG. 1.

Multifrequency C-V curves measured at 300 K (a) and 77 K (b) on a Al/a-Si:H(p+; 20 nm)/a-Si:H(intrinsic; 54 nm)/n-(100)Si sample. Arrows indicate the direction of the voltage sweep.

Image of FIG. 2.
FIG. 2.

100 kHz C-V curves measured at 77 K on n-and p-(100)Si/a-Si:H(intrinsic, 54–56 nm)/a-Si:H(p+, 20 nm)/Al structures. Arrows indicate the direction of the voltage sweep.

Image of FIG. 3.
FIG. 3.

K-band (≈20.5 GHz) ESR spectra measured at 6 K (Pμ = 25 nW; Bm = 1.3 G) on a p-(100)Si/a-Si:H(intrinsic, 56 nm)/a-Si:H(p+-doped, 20 nm) sample with (a) the magnetic field B oriented along the [100] normal to the sample surface (magnet angle ϕB = 0°) and (b) at angle ϕB = 55° with showing the splitting up of the Pb0 signal in two parts with intensity ratio 1:3 for the latter field orientation. The signal at g = 1.99869 stems from a co-mounted calibrated Si:P marker sample. The dotted curves represent optimized total spectra simulations, obtained as sums of the individual simulated component signals.

Image of FIG. 4.
FIG. 4.

Flatband voltage deduced with the gate voltage swept from accumulation to inversion (□) and hysteresis data (◯) extracted from 100 kHz C-V curves, all measured at 77 K on Al/a-Si:H(p+; 20 nm)/a-Si:H(intrinsic)/n-(100)Si samples as a function of the physical thickness of the intrinsic a-Si:H layer. The dashed curve illustrates the Vfb shift expected for the case of re-charging of ∼1.2 × 1017 traps/cm3 distributed uniformly across the i-a-Si:H film, while the solid line represents a least square linear fit used to infer the interface fixed charge density (slope). The inset shows the sample structure.

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/content/aip/journal/apl/100/14/10.1063/1.3698386
2012-04-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Correlation between interface traps and paramagnetic defects in c-Si/a-Si:H heterojunctions
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3698386
10.1063/1.3698386
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