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Semiconducting behavior of niobium-doped titanium oxide in the amorphous state
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10.1063/1.3698389
/content/aip/journal/apl/100/14/10.1063/1.3698389
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3698389
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

The crystal structures of TiOx and TNO films studied by (a) X-ray diffractograms and (b) bright field TEM images.

Image of FIG. 2.
FIG. 2.

Electronic structures of TNO films in the conduction band prepared by X-ray absorption spectroscopy, as a function of annealing temperatures.

Image of FIG. 3.
FIG. 3.

(a) Nb 3d and (b) O 1s spectra of the TNO films obtained by X-ray photoelectron spectroscopy.

Image of FIG. 4.
FIG. 4.

Schematic energy level diagrams reflecting the relative position of the Fermi level (EF) with respect to the conduction band minimum (C.B.) and valence band maximum (V.B.), before and after annealing.

Image of FIG. 5.
FIG. 5.

Representative (a) transfer and (b) output characteristics of annealed TNO films at 450 °C.

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/content/aip/journal/apl/100/14/10.1063/1.3698389
2012-04-02
2014-04-19
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Semiconducting behavior of niobium-doped titanium oxide in the amorphous state
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3698389
10.1063/1.3698389
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