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Schematic diagram depicting the process flow; (a) the starting LED wafer; (b) silica spheres coated onto the wafer surface by spin-coating; (c) pattern transfer to GaN by ICP etching; (d) second monolayer of sphere array coated on top of pillar array; (e) clover-shaped pattern formed after ICP etching.
FE-SEM images showing (a) the ordered hexagonal CP pillar array, (b) the CP clover-shaped PhC, (c) the NCP pillar array, and (d) the NCP clover-shaped PhC.
Calculated bandgap as a function of r/a for (a) pillar arrays and (b) clover-shaped PhCs structures; (c) measured optical transmission spectrum from clover-shaped PhCs; simulated band diagram of (d) CP and (e) NCP clover-shaped structure, predicting PBG centered at ∼517.72 nm and ∼460.75 nm, respectively.
(a) Angular PL plot showing integrated PL intensity versus azimuthal angle. Angular-resolved emission patterns for (b) as-grown, (c) CP, and (d) NCP clover-shaped PhCs. (e) Time-resolved PL decay profiles measured at room temperature. These decay profiles are fitted by double-exponential decay curves.
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