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(a) Initial transfer characteristics and μ FE of SBNVM and ONVM devices, (b) energy band diagram of IGZO Ohmic contact, and (c) Schottky contact. Work functions of materials are referred from Refs. 12–14.
Switching characteristics of (a) the SBNVM device and (c) the ONVM device; threshold voltage shift of (b) SBNVM and (d) OTFTNVM.
(a) Ohmic and Schottky properties of I–V characteristics of the MSM structure using Al and Ag electrodes, respectively and (b) diagram of voltage potential distribution over the structure.
Retention characteristics of (a) SB NVM device for the programming process and (b) Ohmic conventional NVM structure.
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