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Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
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10.1063/1.3699221
/content/aip/journal/apl/100/14/10.1063/1.3699221
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3699221
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Figures

Image of FIG. 1.
FIG. 1.

(a) Initial transfer characteristics and μ FE of SBNVM and ONVM devices, (b) energy band diagram of IGZO Ohmic contact, and (c) Schottky contact. Work functions of materials are referred from Refs. 12–14.

Image of FIG. 2.
FIG. 2.

Switching characteristics of (a) the SBNVM device and (c) the ONVM device; threshold voltage shift of (b) SBNVM and (d) OTFTNVM.

Image of FIG. 3.
FIG. 3.

(a) Ohmic and Schottky properties of I–V characteristics of the MSM structure using Al and Ag electrodes, respectively and (b) diagram of voltage potential distribution over the structure.

Image of FIG. 4.
FIG. 4.

Retention characteristics of (a) SB NVM device for the programming process and (b) Ohmic conventional NVM structure.

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/content/aip/journal/apl/100/14/10.1063/1.3699221
2012-04-02
2014-04-23
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Operation mechanism of Schottky barrier nonvolatile memory with high conductivity InGaZnO active layer
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3699221
10.1063/1.3699221
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