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Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning
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View: Figures


Image of FIG. 1.
FIG. 1.

(a) Square array of SiC nanodots with 35 nm pitch. (b) Arbitrary SiC pattern with minimum spacing of 28 nm.

Image of FIG. 2.
FIG. 2.

(a) and (b) Cross-sectional TEM of two carbide nanodots, along a 〈110〉 zone axis. The original Si substrate surface is delineated with dashed lines.

Image of FIG. 3.
FIG. 3.

(a) The corresponding FFT from the dot Fig. 2(b), extra spots beyond the Si(111) represent 3C-SiC and inner spots come from the Moire fringes. (b) Bragg filtered (inverse FFT) image using Moire fringe reflections. Contrast highlights buried SiC. (c) Bragg filtered image using Si(111) and SiC(111) reflections. The edge component of an interfacial misfit dislocation as observed at the SiC/Si interface.

Image of FIG. 4.
FIG. 4.

(Top) HAADF-STEM image of an embedded SiC nanodot (dark region). Z-contrast clearly shows the deposited Ge film at the substrate-cap interface. No Ge has overgrown the SiC nanodot. (Bottom) high-resolution HAADF-STEM showing the edge of a SiC nanodot and its intersection with the Ge wetting layer.


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Structure of Si-capped Ge/SiC/Si (001) epitaxial nanodots: Implications for quantum dot patterning