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Longitudinal diffusion coefficient () and transverse diffusion coefficient () as functions of electric field at 300 K for method one and method two. The doping concentration is 1.0 × 1017 cm−3.
Diffusion coefficient as the function of doping density without electric field at 300 K calculated by two different methods.
Longitudinal diffusion coefficient versus frequency for InN at different electric field. The doping concentration is 1.0 × 1017 cm−3 and the temperature is 300 K.
Zero-field electron mobility in InN calculated at room temperature as the function of doping concentration. The experiment data are from Refs. 9, 10, 23, and 24.
Parameters used in EMC simulation.8,20
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