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Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
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10.1063/1.3700720
/content/aip/journal/apl/100/14/10.1063/1.3700720
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700720

Figures

Image of FIG. 1.
FIG. 1.

Longitudinal diffusion coefficient () and transverse diffusion coefficient () as functions of electric field at 300 K for method one and method two. The doping concentration is 1.0 × 1017 cm−3.

Image of FIG. 2.
FIG. 2.

Diffusion coefficient as the function of doping density without electric field at 300 K calculated by two different methods.

Image of FIG. 3.
FIG. 3.

Longitudinal diffusion coefficient versus frequency for InN at different electric field. The doping concentration is 1.0 × 1017 cm−3 and the temperature is 300 K.

Image of FIG. 4.
FIG. 4.

Zero-field electron mobility in InN calculated at room temperature as the function of doping concentration. The experiment data are from Refs. 9, 10, 23, and 24.

Tables

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Table I.

Parameters used in EMC simulation.8,20

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/content/aip/journal/apl/100/14/10.1063/1.3700720
2012-04-03
2014-04-18
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Monte Carlo calculation of electron diffusion coefficient in wurtzite indium nitride
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700720
10.1063/1.3700720
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