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In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor
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10.1063/1.3700723
/content/aip/journal/apl/100/14/10.1063/1.3700723
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700723
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Phase image of MOSFET specimen and electrode probe. Voltage applied to the probe, Vp, was (a) 0.0 V and (b) −2.0 V. The phase of the channel surface changed with Vp (denoted by open arrows). (c) Lateral profiles of the measured phase (solid circles) and simulated potential (solid line) from the source to the drain region at Vp = 0.0 V. The measurement position was 20 nm deep from the channel surface (denoted in (a) by a horizontal dashed line). The profiles matched well.

Image of FIG. 2.
FIG. 2.

(a)-(e) Measured phase-profiles at Vp of −3.0, −2.0, −1.0, 0.0, and +1.0, respectively (solid circles, left axis). In the inset (bottom left corner), the dashed vertical arrow on the phase image indicates the measurement position. Solid lines in (a) to (e) show simulated potential profiles at Vg of −0.3, +0.2, +0.7, +1.1, and +1.6 V, respectively (right axis). Vertical arrows at the channel surface indicate the surface potential, ψs.

Image of FIG. 3.
FIG. 3.

Plotted gate voltage, Vg, versus probe voltage, Vp.

Image of FIG. 4.
FIG. 4.

Variation of surface potential, ψs, as a function of probe voltage, Vp. MOS interface was in flat-band condition (ψs = 0.0) when Vp = −0.4.

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/content/aip/journal/apl/100/14/10.1063/1.3700723
2012-04-04
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: In-situ electron holography of surface potential response to gate voltage application in a sub-30-nm gate-length metal-oxide-semiconductor field-effect transistor
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700723
10.1063/1.3700723
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