Full text loading...
Phase image of MOSFET specimen and electrode probe. Voltage applied to the probe, Vp, was (a) 0.0 V and (b) −2.0 V. The phase of the channel surface changed with Vp (denoted by open arrows). (c) Lateral profiles of the measured phase (solid circles) and simulated potential (solid line) from the source to the drain region at Vp = 0.0 V. The measurement position was 20 nm deep from the channel surface (denoted in (a) by a horizontal dashed line). The profiles matched well.
(a)-(e) Measured phase-profiles at Vp of −3.0, −2.0, −1.0, 0.0, and +1.0, respectively (solid circles, left axis). In the inset (bottom left corner), the dashed vertical arrow on the phase image indicates the measurement position. Solid lines in (a) to (e) show simulated potential profiles at Vg of −0.3, +0.2, +0.7, +1.1, and +1.6 V, respectively (right axis). Vertical arrows at the channel surface indicate the surface potential, ψs.
Plotted gate voltage, Vg, versus probe voltage, Vp.
Variation of surface potential, ψs, as a function of probe voltage, Vp. MOS interface was in flat-band condition (ψs = 0.0) when Vp = −0.4.
Article metrics loading...