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Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films
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10.1063/1.3700728
/content/aip/journal/apl/100/14/10.1063/1.3700728
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700728
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

Bipolar resistive switching I-V characteristics of the MIM devices with various insulating layers: (a) pure, (b) Gd-doped, (c) Dy-doped, and (d) Ce-doped ZrO2 films.

Image of FIG. 2.
FIG. 2.

(a) GIXRD patterns of the pure and various rare earth element-doped ZrO2 films. T and C refer to tetragonal and cubic phases, respectively. Cross-sectional HRTEM images of (b) pure, (c) Gd-doped, (d) Dy-doped, and (e) Ce-doped ZrO2 films sandwiched between TaN and Pt electrodes.

Image of FIG. 3.
FIG. 3.

Endurance characteristics of the MIM devices with various insulating layers as a function of the number of dc sweep cycles, up to 5000 cycles: (a) pure, (b) Gd-doped, (c) Dy-doped, and (d) Ce-doped ZrO2 films. The HRS and LRS currents were measured at an applied voltage of 0.2 V.

Image of FIG. 4.
FIG. 4.

Statistical distribution of the HRS and LRS currents measured during the sweep cycles up to 5000 cycles for the undoped and various rare earth element-doped ZrO2 films.

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/content/aip/journal/apl/100/14/10.1063/1.3700728
2012-04-03
2014-04-24
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Resistive switching characteristics of solution-deposited Gd, Dy, and Ce-doped ZrO2 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700728
10.1063/1.3700728
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