Full text loading...
(a) TEM of Si-QD NVM gate view. Inset: extended cross-section of gate stacks. (b) Transfer characteristic of Si-QD NVM before and after programming and erasing conditions. (c) Program and erase speed characteristics of MONOS and Si-QD NVMs at gate voltages of ± 5 and ± 7 V.
The band diagram of MONOS and Si-QD NVM under program and erase states.
Normalized charge loss (ΔVth(t)/ΔVth0) as a function of retention time of MONOS and Si-QD NVMs at temperatures of 25, 75, and 125 °C and after 105 P/E cycles. Inset: Arrhenius plots of retention time characteristics for charge loss of 10%.
(a) Endurance characteristics of MONOS and Si-QD NVMs under different programming and erasing conditions. (b) Comparison of the data retention after extrapolation at ten years and variation of memory window after extrapolation at 106 P/E cycles.
Article metrics loading...