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Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing
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10.1063/1.3700729
/content/aip/journal/apl/100/14/10.1063/1.3700729
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700729
View: Figures

Figures

Image of FIG. 1.
FIG. 1.

(a) TEM of Si-QD NVM gate view. Inset: extended cross-section of gate stacks. (b) Transfer characteristic of Si-QD NVM before and after programming and erasing conditions. (c) Program and erase speed characteristics of MONOS and Si-QD NVMs at gate voltages of ± 5 and ± 7 V.

Image of FIG. 2.
FIG. 2.

The band diagram of MONOS and Si-QD NVM under program and erase states.

Image of FIG. 3.
FIG. 3.

Normalized charge loss (ΔVth(t)/ΔVth0) as a function of retention time of MONOS and Si-QD NVMs at temperatures of 25, 75, and 125 °C and after 105 P/E cycles. Inset: Arrhenius plots of retention time characteristics for charge loss of 10%.

Image of FIG. 4.
FIG. 4.

(a) Endurance characteristics of MONOS and Si-QD NVMs under different programming and erasing conditions. (b) Comparison of the data retention after extrapolation at ten years and variation of memory window after extrapolation at 106 P/E cycles.

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/content/aip/journal/apl/100/14/10.1063/1.3700729
2012-04-02
2014-04-16
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Fast programming metal-gate Si quantum dot nonvolatile memory using green nanosecond laser spike annealing
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700729
10.1063/1.3700729
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