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(a) XPS core-level spectra of C 1s region (left) and Cu 2p region (right) of as-deposited CuC film and (b) initial resistance dependence of Ru/CuC/Pt device on annealing time. Each CuC device was measured for ten times to check the reproducibility of the initial resistance.
(a) Typical current–voltage curves for control and annealed CuC devices. Arrows indicate DC sweep direction. Cumulative probability of (b) on/off resistance and (c) set/reset voltage, indicating stable switching parameters in annealed CuC device.
HR-TEM image of (a) control device and (b) annealed CuC device, which shows agglomerated Cu atoms in the annealed CuC film. C-AFM results for (c) control and (d) annealed CuC films. We scanned an area of 1 μm × 1 μm in both films using a Pt-coated tip.
Schematic illustrations of resistive switching in (a) control and (b) annealed CuC devices.
Retention characteristics of LRS and HRS in the annealed CuC device, which shows a negligible degradation for 104 s at 150 °C.
Summary of resistive switching parameters for control and annealed CuC devices.
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