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Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
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10.1063/1.3700730
/content/aip/journal/apl/100/14/10.1063/1.3700730
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700730

Figures

Image of FIG. 1.
FIG. 1.

(a) XPS core-level spectra of C 1s region (left) and Cu 2p region (right) of as-deposited CuC film and (b) initial resistance dependence of Ru/CuC/Pt device on annealing time. Each CuC device was measured for ten times to check the reproducibility of the initial resistance.

Image of FIG. 2.
FIG. 2.

(a) Typical current–voltage curves for control and annealed CuC devices. Arrows indicate DC sweep direction. Cumulative probability of (b) on/off resistance and (c) set/reset voltage, indicating stable switching parameters in annealed CuC device.

Image of FIG. 3.
FIG. 3.

HR-TEM image of (a) control device and (b) annealed CuC device, which shows agglomerated Cu atoms in the annealed CuC film. C-AFM results for (c) control and (d) annealed CuC films. We scanned an area of 1 μm × 1 μm in both films using a Pt-coated tip.

Image of FIG. 4.
FIG. 4.

Schematic illustrations of resistive switching in (a) control and (b) annealed CuC devices.

Image of FIG. 5.
FIG. 5.

Retention characteristics of LRS and HRS in the annealed CuC device, which shows a negligible degradation for 104 s at 150 °C.

Tables

Generic image for table
Table I.

Summary of resistive switching parameters for control and annealed CuC devices.

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/content/aip/journal/apl/100/14/10.1063/1.3700730
2012-04-03
2014-04-20
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Improved switching uniformity in resistive random access memory containing metal-doped electrolyte due to thermally agglomerated metallic filaments
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700730
10.1063/1.3700730
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