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Nanosecond threshold switching of GeTe6 cells and their potential as selector devices
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View: Figures


Image of FIG. 1.
FIG. 1.

Time-resolved measurement of threshold switching characteristics of GeTe6 device for the applied voltage pulse Va of 1.60 V (1 ns rise time, 100 ns plateau time and trailing edge, respectively (black color)), as well as the measured device voltage Vd (green color) and the device current Id (red color). Vh denotes the holding voltage below which the device returns to the high resistance off state.

Image of FIG. 2.
FIG. 2.

Time-resolved measurement of the device current Id for voltage pulses ranging from 1.40 to 1.85 V. The overlay of Id reveals the dependency of transient parameters such as delay time on the voltage pulse. The height of the applied voltage pulse is color coded. This viewgraph demonstrates the pronounced dependence of the delay time upon the height of the voltage pulse.

Image of FIG. 3.
FIG. 3.

Dependence of delay time td (a) and holding voltage Vh (b), on the applied voltage. The different colors represent the device resistance before the threshold switching event.

Image of FIG. 4.
FIG. 4.

The transition from a highly resistive off state to a highly conducting on state in the amorphous phase is depicted for a series of switching events. A constant holding voltage confirms the stability of the amorphous on state (black color). These cycling measurements demonstrate the stability of the on and off resistance upon multiple threshold switching processes. The result of numerous switching events is highly reproducible as well (Roff = (80 ± 10 MΩ), Ron = (3 ± 1 kΩ), and Vh = 0.70 ± 0.02 V).


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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Nanosecond threshold switching of GeTe6 cells and their potential as selector devices