Full text loading...
HRTEM images of interfaces for samples of Au/Ta/PCMO structure with different tTa, (a) without Ta inserted, (b) 1 nm, (c) 3 nm, and (d) 7 nm. The thicknesses of these amorphous interfacial layers are 0 nm, 2.6 nm, 3.76 nm, and 4 nm, respectively.
EELS spectrum measured at the amorphous interfacial region for a sample of Au/Ta (1 nm)/PCMO.
I-V characteristics for Au/Ta/PCMO samples with different tTa. (a) Forming and (b) resistive switching processes measured by pulsed voltage sweep with a current compliance of 100 mA.
The tTa dependence of (a) NDR voltage VP, (b) set voltage VS, and (c) HRS/LRS value (measured at −0.4 V). These results were collected and statistically analyzed from samples with different tTa.
Article metrics loading...