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Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films
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10.1063/1.3700806
/content/aip/journal/apl/100/14/10.1063/1.3700806
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700806
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Figures

Image of FIG. 1.
FIG. 1.

HRTEM images of interfaces for samples of Au/Ta/PCMO structure with different tTa, (a) without Ta inserted, (b) 1 nm, (c) 3 nm, and (d) 7 nm. The thicknesses of these amorphous interfacial layers are 0 nm, 2.6 nm, 3.76 nm, and 4 nm, respectively.

Image of FIG. 2.
FIG. 2.

EELS spectrum measured at the amorphous interfacial region for a sample of Au/Ta (1 nm)/PCMO.

Image of FIG. 3.
FIG. 3.

I-V characteristics for Au/Ta/PCMO samples with different tTa. (a) Forming and (b) resistive switching processes measured by pulsed voltage sweep with a current compliance of 100 mA.

Image of FIG. 4.
FIG. 4.

The tTa dependence of (a) NDR voltage VP, (b) set voltage VS, and (c) HRS/LRS value (measured at −0.4 V). These results were collected and statistically analyzed from samples with different tTa.

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/content/aip/journal/apl/100/14/10.1063/1.3700806
2012-04-03
2014-04-25
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752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Effect of TaOx thickness on the resistive switching of Ta/Pr0.7Ca0.3MnO3/Pt films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700806
10.1063/1.3700806
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