1887
banner image
No data available.
Please log in to see this content.
You have no subscription access to this content.
No metrics data to plot.
The attempt to load metrics for this article has failed.
The attempt to plot a graph for these metrics has failed.
Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films
Rent:
Rent this article for
USD
10.1063/1.3700864
/content/aip/journal/apl/100/14/10.1063/1.3700864
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700864

Figures

Image of FIG. 1.
FIG. 1.

X-ray diffraction patterns of In2O3:Fe and In2O3:(Fe,Zr) films deposited on (001) YSZ substrates at 600 °C in 10−5 Torr of oxygen. The film thickness is ∼350 nm for all films.

Image of FIG. 2.
FIG. 2.

Magnetization versus magnetic field (M-H) curves of In2O3:Fe and In2O3:(Fe,Zr) films measured by VSM at 300 K. The field (H) was applied perpendicular to the film plane. Insets show hysteresis loops of the In2O3:(Fe,Zr) film (top-left) and the In2O3:Fe film (bottom-right) with the magnetic field applied parallel (H//) and perpendicular (H) to the film plane.

Image of FIG. 3.
FIG. 3.

Anomalous Hall effect loops of In2O3:Fe and In2O3:(Fe,Zr) films measured at 300 K by PPMS. Top-left inset provides the temperature dependence of resistivity ρ(T) curves for both films. Bottom-right inset provides ρ xy versus H for both films before subtracting the linear ρ OHE term.

Image of FIG. 4.
FIG. 4.

Magnetic field dependence of anomalous Hall resistivity (ρ AHE) and magnetization (M) at 300 K for (a) In2O3:Fe and (b) In2O3:(Fe,Zr) films.

Tables

Generic image for table
Table I.

Electrical and magnetic properties of In2O3:Fe and In2O3:(Fe,Zr) films measured at 300 K. The magnetic field (H) is applied perpendicular to the film plane. n is the carrier concentration, ρ is electrical resistivity, a is the in-plane lattice parameter, c is the out-of-plane lattice parameter, ɛ is the out-of-plane strain, HC is the coercivity, MS is the saturation magnetization, ρ AHE is the anomalous Hall resistivity, and σ AHE is the anomalous Hall conductivity.

Loading

Article metrics loading...

/content/aip/journal/apl/100/14/10.1063/1.3700864
2012-04-03
2014-04-24
Loading

Full text loading...

This is a required field
Please enter a valid email address
752b84549af89a08dbdd7fdb8b9568b5 journal.articlezxybnytfddd
Scitation: Enhancement of carrier-mediated ferromagnetism in Zr/Fe-codoped In2O3 films
http://aip.metastore.ingenta.com/content/aip/journal/apl/100/14/10.1063/1.3700864
10.1063/1.3700864
SEARCH_EXPAND_ITEM