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X-ray diffraction patterns of In2O3:Fe and In2O3:(Fe,Zr) films deposited on (001) YSZ substrates at 600 °C in 10−5 Torr of oxygen. The film thickness is ∼350 nm for all films.
Magnetization versus magnetic field (M-H) curves of In2O3:Fe and In2O3:(Fe,Zr) films measured by VSM at 300 K. The field (H) was applied perpendicular to the film plane. Insets show hysteresis loops of the In2O3:(Fe,Zr) film (top-left) and the In2O3:Fe film (bottom-right) with the magnetic field applied parallel (H//) and perpendicular (H⊥) to the film plane.
Anomalous Hall effect loops of In2O3:Fe and In2O3:(Fe,Zr) films measured at 300 K by PPMS. Top-left inset provides the temperature dependence of resistivity ρ(T) curves for both films. Bottom-right inset provides ρ xy versus H ⊥ for both films before subtracting the linear ρ OHE term.
Magnetic field dependence of anomalous Hall resistivity (ρ AHE) and magnetization (M) at 300 K for (a) In2O3:Fe and (b) In2O3:(Fe,Zr) films.
Electrical and magnetic properties of In2O3:Fe and In2O3:(Fe,Zr) films measured at 300 K. The magnetic field (H) is applied perpendicular to the film plane. n is the carrier concentration, ρ is electrical resistivity, a is the in-plane lattice parameter, c is the out-of-plane lattice parameter, ɛ⊥ is the out-of-plane strain, HC is the coercivity, MS is the saturation magnetization, ρ AHE is the anomalous Hall resistivity, and σ AHE is the anomalous Hall conductivity.
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